4 edition of Gunn-Hilsum effect found in the catalog.
Melvin P. Shaw
|Statement||Melvin P. Shaw, Harold L. Grubin, and Peter R. Solomon.|
|Contributions||Grubin, Harold L., joint author., Solomon, Peter R., 1939- joint author.|
|LC Classifications||TK7872.G8 S5|
|The Physical Object|
|Pagination||xviii, 250 p. :|
|Number of Pages||250|
|LC Control Number||76045995|
An integrated self-charging power unit, combining a hybrid silicon nanowire/polymer heterojunction solar cell with a polypyrrole-based supercapacitor, has been demonstrated to simultaneously harvest solar energy and store it. By efficiency enhancement of the hybrid nanowire solar cells and a dual-functional titanium film serving as conjunct electrode of the solar cell and supercapacitor, the Cited by: A one-dimensional model system of the Gunn-effect device is considered. It consists of an n + - n - n + GaAs sandwich structure where the high- n + contact layers on both ends are linearly graded to the uniformly distributed low- n bulk region and a half-wave sinusoidal doping notch is incorporated near the cathode. Using the finite differece method, spatio-temporal evolution of the system Cited by:
The Gunn-Hilsum Effect Handbuch Bio-Balkongarten: Gemüse, Obst und Kräuter auf kleiner Fläche ernten Диагностика кармы (вторая серия). Zuleeg, K. Lehovec, "Radiation Effects in Gaas Junction Field-Effect Transistors", Nuclear Science IEEE Transactions on, vol. 27, no. 5, pp. , View Article Full .
In this review, strongly coupled SLs are described by spatially continuous equations and display self-sustained current oscillations due to the periodic motion of a charge dipole as in the Gunn effect for bulk semiconductors. In contrast, weakly coupled SLs have to Cited by: How Preamps Quietly Make Big Gains Part 1 - Read online for free. Column: Andy Szikla In one of his books about lateral thinking, Edward de Bono talks about a bunch of designers sitting around a big table trying to re-invent the airplane. One guy wants to put in more seats so they can make more money per flight. An.
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The Gunn-hilsum Effect Paperback – Novem by Melvin P. Shaw (Author)Cited by: The Gunn-Hilsum Effect covers the physical principles controlling the operation of transferred electron devices. These devices have been proven quite useful in the generation, amplification, and processing of microwave signals well into tens of gigahertz range.
Organized into seven chapters, the book focuses on the analytical and numerical approaches of the two vital aspects of device behavior for a given bulk. Buy The Gunn-Hilsum Effect: Read Books Reviews - The Gunn-Hilsum Effect covers the physical principles controlling the operation of transferred electron devices.
These devices have been proven quite useful in the generation, amplification, and processing of microwave signals well into tens of gigahertz range. Organized into seven chapters, the book Book Edition: 1. The Gunn-Hilsum Effect. Borrow eBooks, audiobooks, and videos from thousands of public libraries worldwide.
(where U is the bias voltage, L is the sample length) was greater than some critical value F t (~3kV/cm for GaAs and ~6kVJcm for InP), spontaneous current oscillations appeared in the circuit  (see Fig. 4–1–1). Later Gunn published the results of the detailed experimental study of this effect .
Using probe measurements of the potential distribution across the sample he established Author: Michael Shur. Melvin P.
Shaw: free download. Ebooks library. On-line books store on Z-Library | B–OK. Download books for free. Find books The Gunn-hilsum Effect. Academic Press. Melvin Shaw (Auth.) Year: A search query can be a title of the book, a name of the author, ISBN or anything else.
This chapter discusses the gunn-hilsum effect electronics. It presents a discussion of the operating principles and the characterization of short negative differential mobility (NDM) devices. It is seen that the material parameters of the device, the metal-semiconductor contact, the circuit, the space charge distribution, and the temperature distribution all affect device by: 4.
Abstract Detailed experimental and theoretical treatments of the Gunn diode, whose operation depends on the transferred electron, or Gunn-Hilsum effect, have been presented by many authors (see, e.g., Shaw et al., ). Most of these have centered on sample and device lengths greater than 10 by: 1.
In solid state physics the Ridley–Watkins–Hilsum theory (RWH) explains the mechanism by which differential negative resistance is developed in a bulk solid state semiconductor material when a voltage is applied to the terminals of the sample.
It is the theory behind the operation of the Gunn diode as well as several other microwave semiconductor devices, which are used practically in electronic oscillators.
An early review of the Gunn effect was published by Kroemer ; Volkov and Kogan  as well as Shaw et al  are useful supplements. The main analytical results on self-oscillations in Gunn.
The Gunn-Hilsum Effect by Shaw, Grubin, Solomon Hardcover, fair condition, some wear, no loose pages. cover starting to separate from text at title page - not detached Rating: % positive.
Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance. Scientific Reports8 (1) DOI: /sy. Eesha Andharia, Thaneshwor P. Kaloni, Gregory J. Salamo, Shui-Qing Yu, Hugh O.
Churchill, Salvador by: 9. Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance. Scientific Reports8 (1) DOI: /sy.
Pranav Ambhorkar, Zongjie Wang, Hyuongho Ko, Sangmin Lee, Kyo-in Koo, Keekyoung Kim, Dong-il by: Harold L. Grubin Detailed experimental and theoretical treatments of the Gunn diode, whose operation depends on the transferred electron, or Gunn-Hilsum effect, have been presented by many authors.
ISBN: OCLC Number: Description: xviii, pages: illustrations ; 24 cm: Responsibility: Melvin P. Shaw, Harold L.
Grubin, and. Genre/Form: Electronic books: Additional Physical Format: Print version: Shaw, Melvin P. Gunn-Hilsum effect. New York: Academic Press, (DLC) The Gunn effect in III-IV heterojunction bipolar transistors is investigated using hydrodynamic simulations.
It is shown that Gunn domains nucleate and propagate in the collector drift region of an npn AlGaAs/GaAs transistor in which the electric field at the base Cited by: 8. Gunn-Hilsum Effect / Melvin P. Shaw / Teratomas and Differentiation: Proceedings of the Roche Institute of Molecular Biology Symposium, Nutley, NJ, May / Roche Institute of Molecular Biology Symposium St / Computer Vision and Image Processing /.
A theory of transport of hot carriers in bulk III‐V compounds is outlined. Equilibrium calculations are performed which show fair agreement with earlier Monte Carlo calculations and with experiment Cited by:. A phenomenological model for the evolution equations for charged carriers in semiconductors is proposed which can give rise to a limit cycle of current as the field strength passes through a critical point.
The model is a modification of the previously reported model for carrier mobility. We have studied the macroscopic dynamics of the model and its relation to the structure of the entropy Cited by: 6.International Journal of High Speed Electronics and Systems Vol.
14, No. 04, pp. () BREAKDOWN PHENOMENA IN SEMICONDUCTORS AND SEMICONDUCTOR DEVICES BY M. E. LEVINSHTEIN, J. KOSTAMOVAARA and S.
VAINSHTEIN No AccessCited by: There might be more projects where Andreas Isacsson participates, but you have to be logged in as a Chalmers employee to see them.
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